Mem Sodimm Ddr4 16gb 2666mhz Adata Cl19 Ad4s266616g19-sbk

1105209
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Tipo de módulo: SO-DIMM

Factor de forma: altura estándar de 1,18"

Tipo de memoria: DDR4

Estándar: JEDEC

Interfaz: 260 pines

Densidad: 16GB

Velocidad 2666MHz

Latencia CAS: CL 19-19-19

Fuente de alimentación: VDD y VDDQ = 1,2 V ± 0,06 V

Fuente de alimentación de activación DRAM: VPP = 2,5 V (+0,25 V/-0,125 V)

Especificaciones DRAM / VCC: DDR4 STD 1.2V

Temperatura de funcionamiento: 0°C a 85°C

" ["description_short"]=> string(525) "

Tu equipo como nuevo. Esta memoria de formato SODIMM es ideal para tu Notebooks. ¡Instalala y comenzá a disfrutar de un óptimo funcionamiento!

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Sin reseñas
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¡Escanea este código! phone_iphone

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Tipo de módulo: SO-DIMM

Factor de forma: altura estándar de 1,18"

Tipo de memoria: DDR4

Estándar: JEDEC

Interfaz: 260 pines

Densidad: 16GB

Velocidad 2666MHz

Latencia CAS: CL 19-19-19

Fuente de alimentación: VDD y VDDQ = 1,2 V ± 0,06 V

Fuente de alimentación de activación DRAM: VPP = 2,5 V (+0,25 V/-0,125 V)

Especificaciones DRAM / VCC: DDR4 STD 1.2V

Temperatura de funcionamiento: 0°C a 85°C

" ["description_short"]=> string(525) "

Tu equipo como nuevo. Esta memoria de formato SODIMM es ideal para tu Notebooks. ¡Instalala y comenzá a disfrutar de un óptimo funcionamiento!

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Sin reseñas
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¡Escanea este código! phone_iphone

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Impuestos incluidos

Tu equipo como nuevo. Esta memoria de formato SODIMM es ideal para tu Notebooks. ¡Instalala y comenzá a disfrutar de un óptimo funcionamiento!

Tipo de módulo: SO-DIMM

Factor de forma: altura estándar de 1,18"

Tipo de memoria: DDR4

Estándar: JEDEC

Interfaz: 260 pines

Densidad: 16GB

Velocidad 2666MHz

Latencia CAS: CL 19-19-19

Fuente de alimentación: VDD y VDDQ = 1,2 V ± 0,06 V

Fuente de alimentación de activación DRAM: VPP = 2,5 V (+0,25 V/-0,125 V)

Especificaciones DRAM / VCC: DDR4 STD 1.2V

Temperatura de funcionamiento: 0°C a 85°C

Sin reseñas

¡Escanea este código! phone_iphone

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